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Wenjing Wang

Professor - Institute of Electrical Engineering, CAS

Wenjing Wang

Professor - Institute of Electrical Engineering, CAS

Biography

Professor, group leader of PV research, Deputy Director of Key laboratory of Solar Thermal and PV System,institute of Electrical Engineering, CAS.

Member, SEMI international, Member, standing committee of China Renewable Energy Society.

Member, standing committee of Photovoltaic Commission of China Solar PV Society.

He have studied the mono-, poly- and amorphous-crystalline Si solar cell for about 25 years, and publish 180 research papers.

He did research on crystalline Si solar cell such as HJT、PERC、Topcon. He also did research on Ag paste for front electrode of commercial crystalline Si Solar cell and special Ag paste for HJT.

研究员,博士,博士生导师。

中国科学院电工研究所太阳电池技术研究部主任。

中国科院太阳能热利用与光伏系统重点实验室副主任。

国际半导体学会(SEMI)会员。

中国可再生能源学会理事,中国可再生能源学会光伏专业委员会理事。

1991年至1994年在中科院长春物理所攻读并获得博士学位。1996年至2005年在北京太阳能研究所从事太阳电池的研究。2005年进入中科院电工研究所。自1996年起,长期从事晶体硅太阳电池,硅薄膜太阳电池,太阳电池产业政策,光伏电价政策,太阳电池应用开发等领域的研发工作。发表论文200余篇,译著1本,发表专著及编著4本,合作授权或申请专利50项。

Topic

The Mixture of Two New Crystalline Si Solar Cell Technology: Topcon & HJT

HJT 和Topcon两种新型太阳电池技术的融合

Abstract

Up to now, there are two kinds of new technology for crystalline Si solar cell, Topcon and HIT. But they meet many difficulties when they try to enter into mass production. To overcome these difficulties, these two technologies trend to mix together. For Topcon, the front contact passivation layer will be made and the polysilicon layer will become more and more thinner. To prevent the transform doped atom through SiO2, the poly-Si will become more or less like micro-Si, and ITO have to be added. For HJT solar cell, a-Si layer has strong absorbing the induced light. So it have to become more or less nc-Si or μm-Si.  So in future, these two technology may mix together.

截止到目前为止,有两种新型的晶体硅太阳电池HJT和Topcon技术。但是这两种太阳电池技术在大规模产业化的过程中都遇到很多困难。为了克服这些困难,这两种技术有互相融合的趋势。对于Topcon电池,其前表面加入钝化多晶硅膜才能真正提高效率,但是前表面多晶硅层存在光学吸收,因此需要将前表面的多晶膜做的很薄,如果仍旧使用高温烧结银电极技术,会导致烧穿多晶硅PN结的现象,因此一个比较好的解决方案就是再前表面多晶硅层外侧叠加TCO膜,并使用低温浆料。此外为了避免掺杂原子透过SiO2膜,应尽量避免采用高温工艺,因此高温退火工艺或改成PECVD法直接制备微晶硅。对于HJT电池,由于制备非晶硅的温度很低,不超过200℃,因此必须采用低温浆料、低温焊接等技术,导致电极制备难度增大。此外,非晶硅的光吸收率非常强,掺杂原子激活困难,因此能带匹配困难。最新的技术发展是使用纳米晶硅或微晶硅取代非晶硅掺杂层。因此未来两种电池的结构趋向于统一。